Khoverko Y. Microelectronic sensors on basic SOI-structures with recrystallized polysilicon layers.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0404U000308

Thesis Registration Form

0404U000308.pdf

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

24-12-2003

Specialized Academic Board

Д 35.052.12

Lviv Polytechnic National University

Essay

Object- structures of type silicon on insulator with recrystallized polysilicon and sensors on their base. Aim- creation an SOI-structures with given characteristics polysilicon layer and development microelectronic sensors for using in different of the temperature. Innovation-is stated optimum levels to doped admixtures of boron for polysilicon; technological processes lazer recrystallised polysilicon and anisotropic etching is improved; development technological process of creation multifunctional sensors. Application- electronic industry.

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Files

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