Mihalchuck V. Development of precise temperature control devices of melt and thermal conditions optimization growing diameter 150 mm silicon ingots

Our object is - SZ medhod silicon ingots cultivation technology and its improvement with the purpose of reception structurally accomplished silicon ingots with a diameter of 150 mm; the purpose is a complex experimental study of heat-mass transfer processes of silicon melt with ignots cultivating scientific substantiation temrerature control technics of melt scientific definition of optimum thermal condi-tions of silicon ignots cultivation with a diameter of 150 mm; the methods are thermal physics fundamental rules metrology technologies of semi-conductor materi-als, infrared spectroscory method cultivating thermocouples method, method of final elements and differences; The results are that experimental researches of dependence of melting temperature from heater capacity at melting endurance spindle drawing cone and ignot cylinder parts in regular mode operations of installation " REDMET - 30 " are carried out. the mathematical model of melt temperature fields and the axial and radial temperature gradients in a silicon ingot are determined, the devices of melting temperature control are developed, the technique of melting temperature control with the use of two pyrometric converters in a uniform complex structure of automation means in silicon ingots cultivation is developed, the technology of silicon ingot cultivation is advanced with the purpose of getting structurally accomplished silicon monocrystals by a diameter of 150 mm; The novelty - for the first time the influence of ignot cultivation speed, frequency of capsule and ingot rotation on distribution of radial and axial temperature gradients in an ingot by a diameter of 150 mm, are researched in complex, temperature fields of growing installation REDMET - 30 are investigated with the definition purpose of optimum thermal conditions of silicon ingot cultivation by a diameter of 150 mm, the way of the melting tempera-ture automatic control during all work cycle is developed, the melting temperature support and the monitoring application system during all work cycle for the first time is introduced which provides structurally accomplished silicon ingots getting with even distribution of microdefects on an ingot lenght ;implementation - the technol-ogy is put into operation at " Pure metals " enterpris, Svetlovodsk, branch - elec-tronic branch enterprises and branch research institutes engaged in cultivation of ingots.