Kudryk Y. Effect of active actions on the formation processes and properties of ohmic and barrier contacts to silicon carbide.

The thesis deals with investigation of processes occurring at metal/silicon carbide interface exposed to active treatments. It is determined that amorphous and quasi-amorphous TiBx (ZrBx) films exposed to rapid thermal annealing (RTA) up to a temperature of 1000 °C do not exhibit structure and phase transitions. The Schottky barrier structures on their basis are tolerant to RTA up to a temperature of 1000 °C and to 60Co (-irradiation (doses up to 109 R). Along with thermal treatments, non-thermal ones were also applied to form ohmic contact to SiC with contact resistance. It is determined that resistivity and thermal stability of contacts formed with non-thermal treatments are the same as those obtained at thermal formation.