Korolev O. Noise in MESFET- and HEMT-based amplifiers and the methods of noise reduction

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U000840

Thesis Registration Form

0405U000840.pdf

Applicant for

Specialization

  • 01.04.01 - Фізика приладів, елементів і систем

11-02-2005

Specialized Academic Board

Д 64.051.02

V.N. Karazin Kharkiv National University

Essay

The object of investigation is a noise both of field-effect-transistors, including HEMT, and FET/HEMT-based amplifiers. The purpose is definition of limit noise parameters of microwave transistors and methods of their optimum application. The methods are CAD, reflectometry, Q-metry, noise measurements by Y-method. The results and novelty: a new mechanism (latent mismatch) for noise increase has been identified, the record value (about 10 K) of noise temperature of L-band amplifier has been achieved without criogenic cooling. A field of uses is high-sensitive receivers for radio astronomy, communication and radar systems.

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Files

aref.doc

dissert.doc

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