Khramov Y. Еlectric parameters of elements of integrated circuits in conditions of act of radiation

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U002121

Thesis Registration Form

0405U002121.pdf

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

04-05-2005

Specialized Academic Board

К 41.052.03

Essay

The dissertation is devoted to research of the electrophysical phenomena in elements of solid-state electronics at bombarding radiation, development of methods of raise of radiating durability of products of microelectronics. Perspectivity of methods of higher harmonics for research of complex defects is shown. The model of radiating faults builts. Generation of caloric radiation in Si is revealed at bombarding radiation. The methodology of raise of radiating durability of elements of microelectronics is proved.

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