Myshchyshyn V. Planar diffusion sources for diffusion of boron from alyumoborosilicon compounds.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U003133

Thesis Registration Form

0405U003133.pdf

Applicant for

Specialization

  • 05.27.06 - Технологія, обладнання та виробництво електронної техніки

27-05-2005

Specialized Academic Board

Д 35.052.12

Lviv Polytechnic National University

Essay

Object-alyumoborosilicon compounds and silicon wafers.Goal-creation of planar diffusion sources of boron on the basis of aluminium boron silicon compounds on heat-resistant substrates. Novelty-the region of contents of materials applicable for planar diffusion source was determined by methods of solid state physics.Range of application-silicon material science.

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Files

Myshchyshyn_dys.doc

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