Bogoslovskaya A. Injection-thermal and recombination processes in semiconductor multibarrier A3B5 emitters of infra-red spectral range

The influence of injection-thermal processes on the physical parameters of semiconductor IR- emitters on the basis of the semiconductors InGaAs, InAsSbP, GaInAsSb is investigated. The mutual influence of thermal and recombination processes in semiconductor IR - emitters is analyzed. The decrease of the quantum efficiency of IR-emitters with the growth of injection current is experimentally established. It is caused by the rise of the Auger-processes probability. It is shown that the temperature of overheating depends on the height of the energy barriers at the heteroboundary both in single- and double- heterostructures. The higher values of overheating temperatures in double heterostructures are caused by the higher rate of Auger recombination due to larger band breaks in these structures. The influence of the mismatch dislocations in heterostructures on the quantum efficiency of IR - emitters was analyzed. Mechanisms and kinetics of injection-thermal degradation of the basic functional parameters of emitters have been studied. The reason of anomalous degradation of IR - emitters is the interplay of two groups of centers (stable and unstable) at the low efficiency of Auger recombination.