Egorov S. The influences of melt characteristic on silicon crystallization conditions and property of grown single crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U001590

Thesis Registration Form

0406U001590.pdf

Applicant for

Specialization

  • 05.16.03 -

05-04-2006

Specialized Academic Board

Д 17.100.02

Essay

The connection between speed of convectional streams in a melt zone and thickness of a diffusion layer at the front crystallizations of a single crystal, the effective coefficient of impurities distribution and parameters of the grown silicon single crystals by a induction floating-zone melting method for the first time is determined. On a base of the carried out investigations the mathematical model for exposition of convectional streams and the allocation of impurities in a melt zone is designed. The reception of removal of negative influence of convectional streams is offered with the purpose of magnification of the specific electrical resistance of silicon single crystals.

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Files

автореферат.doc

диссертация.doc

диссертация.doc

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