Chervonyj I. Scientific fundamentals and development of a competitive technology of single crystal silicon by the method of special electrometallurgy (float - zone melting).

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0599U000454

Thesis Registration Form

0599U000454.pdf

Applicant for

Specialization

  • 05.16.03 -

21-10-1999

Specialized Academic Board

Д 17.100.02

Essay

Monocrystalline silicon technology has been developed and scientifically substantiated by the method of special electrometallurgy (by float-zone melting). For research purpose x-ray-graphical, metallographical and electron-microscopic method have been used. Numerical method for determination of regimes of melting and doping have been found, criteria for evaluation of material quality have been developed. On the basis of the suggested mechanism for microde-fect microdefect formation there have been developed technological regimes for single crystal growth with a target type of microdefects. At ZSTMC a technology for production of single crystals of 100-105 mm in diameter have been developed and introduced into production.

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