Kritskaja T. Properties manegement and development of industrial tecnologi of single-cristal silicon for electronics and solar energy

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0506U000634

Thesis Registration Form

0506U000634.pdf

Applicant for

Specialization

  • 05.16.03 -

01-11-2006

Specialized Academic Board

Д 17.100.02

Essay

New mechanisms were established for increasing the purity and macro- and microuniformity of the distribution of impurities in non-dislocation silicon monocrystals that we grown by Czokhralsky method. Industrial technology was developed for silicon monocrystals with the set of properties that had not been attained earlier, for microelectronoics, power converter technique and the production of photoelectrical converters. Mechanism of resistance of silicon monocrystals doped with germanium to thermal and radiation impacts was substantiated both theoretically and experimentally. The earlier unknown mechanism was established, and the model of relaxation of internal elastic stresses in high-doped non-dislocation monocrystals. For the first time, the principles of varying the qualities of quartz crucibles and silicon monocrystals properties exposed to gamma irradiation were established.

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Files

Критская Т.В. Диссертация.pdf

Критська Т.В. Автореферат укр.pdf

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