Mrykhin I. The complex doping in technology of geterostructures manufacturing for semiconductor injection lasers on the GaAs-AlGaAs basis

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U001949

Thesis Registration Form

0406U001949.pdf

Applicant for

Specialization

  • 05.27.06 - Технологія, обладнання та виробництво електронної техніки

26-04-2006

Specialized Academic Board

Д 35.052.12

Lviv Polytechnic National University

Essay

The study of peculiarities of isovalent, rare-earth elements and electrically active dopants influence on electrophysics properties of GaAs epitaxial layer in the low temperature LPE technology had been made. The optimal technological conditions for making light and high doped p-AlGaAs are established. The testing double heterostructure with threshold 4 kA/cm2 had been made on the basis this study.

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Files

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