Yaganov P. Microelectronic transducers in silicon structures with dielectric insulation

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U002092

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

15-05-2006

Specialized Academic Board

Д 26.002.08

Publishing and Printing Institute of Igor Sikorsky Kyiv Polytechnic Institute

Essay

The dissertation is devoted to development of high-sensitive integrated microelectronic sensors in silicon structures with dielectric insulation (SSDI), and to design, based on these structures, of new measuring transducers of non-electric quantities (TNEQ) with wide functional abilities. In the course of theoretical and experimental investigations described in this thesis, a new multi-sensor SSDI was developed, and peculiar features of its operation and metrical characteristics were studied. The structure was used as the kernel in newly created instrumental TNEQ with wide functional abilities. Development of methods of simulation of metric characteristics of the sensors has been continued. For high-precision approximation of metric characteristics, the regression analysis and algorithms of neural networks were used.

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