Prokhorov G. Radiation defectcreation and mechanical tensions in the silicon structures of microelectronics

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U002950

Thesis Registration Form

0406U002950.pdf

Applicant for

Specialization

  • 01.04.01 - Фізика приладів, елементів і систем

02-06-2006

Specialized Academic Board

Д 76.244.01

Essay

Work is devoted to research of influencing of bombardment by high-power particles (by ions, protons, neutrons, gamut-quanta, alpha-particles) on mechanical and electric properties of semiconductors and device stratified structures on their basis. There were developed practical recommendations for the increasing of operating descriptions and radiation stability of devices, and in that number - sensory structures of microelectronics.

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