Sydor O. Investigation of photosensitive surface-barrier structures based on indium and copper-indium selenides

In the work qualitative and reproduced surface-barrier structures metal/p-CuInSe2 (metal - Іn, Sn, Zn) were produced; mechanisms of current transfer are defined and interpreted, for the first time from a single standpoint a comparison of the experimental results to known theoretical expressions is carry out. For the first time the regularity of intrinsic oxide formation at InSe surface as a result of long-term thermal oxidation (till 5 days) are established and its effect on electrical, photoelectric properties of intrinsic oxide-InSe heterojunction is investigated. A positive influence of small dozes (<300 R) of gama-irradiation on these junctions is registered. In the work for the first time an opportunity of optimization of photoelectric parameters of intrinsic oxide p-InSe structures resulting in cell efficiency of about 5.9 % is realized. For the first time the opportunity of preparation by thermal oxidation method of rectifying isotype heterojunction intrinsic oxide/n-InSe, n-p-n and n-n-n oxidephototransistors on the basis of InSe as well as low-dimensional formations on oxide - layered semiconductor interface is shown. Results of the investigations of electrical and photoelectric properties of n-InSe - p-CuInSe2 optical contact are presented.