Markolenko P. Switching in thyristor structures at a high level of injection and action of the external factors (light, magnetic field, radiation)

Dissertation is devoted to the study of processes of switching of semiconductor p-n-p-n-structures and influencing on them the electric and magnetic fields light and radiation.There is on the defensive scientific labour the physical and mathematical models of p-n-p-n-structures are examined in which. The dynamic process of including of p-n-p-n-structure is investigational taking into account the size of base current which results in switching of structure in the opened state. General description of methods of prevention of including of parasite p-n-p-n-structures is given in integral transistors microcircuits. Is solved the equation Puasson with the purpose of definition of connection between potential on a field electrode and width of the channel connecting one of emitters p-n-p-n-structures to base at other emitter.The mean of switching of photothyristor by the external radiation isconsidered and the size of minimum impulse of light sufficient for switching is expected. The action of radiation is investigational on the parameters of switching of p-n-p-n-structures. The chart of rectifier of alternating current is described on the basis of tiristors which is managed the external magnetic field