Zuev S. Dynamic model of physical processes in the field transistors with the Shcottky gate submicron sizes

The aim - development of Schottki GaAs field transistors general theory in view of warming up specificity and carriers dispersions mechanisms in the intense operating mode down to avalanche and thermal breakdowns. Object - dynamic physical processes and charge transfer phenomena, which determine avalanche breakdown initiation, termination and development processes dynamics in Schottki field transistors. Methods - FACR, finite difference method for Poisson equation solution, Eulerian method, the macroparticle approach (Monte Carlo procedure) for Boltzmann equation solution . Results - development of high field mode simulation package for Schottki field transistors; numerous test results are obtained. Implementation - in high current semiconductor devices production. Application - technical process and production of integrated circuits and digital devices