Astakhov O. The effect of electron irradiation on the properties of the nanocryistalline silicon

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0407U004022

Thesis Registration Form

0407U004022.pdf

Applicant for

Astakhov Oleksandr Mykhailovich

Specialization

01.04.21 - Радіаційна фізика і ядерна безпека

Date of defense

16-10-2007

Specialized Academic Board

Д 64.845.01

National Science Center "Kharkiv Institute of Physics and Technology"

Essay

The work is a complex study of the defects created after the 2MeV electron irradiation and the role of these defects in the electronic properties of the material. Dangling bonds are the dominating type of the paramagnetic states in the material over the whole range of the defect densities. The electron irradiation leads also to creation of the new paramagnetic centers. The inverse dependence of the photoconductivity on the defect density was shown while the photoconductivity of nanocrystalline material does not exhibit systematic dependence. This discrepancy proposed to be due to the inhomogeneous distribution of defects in the material of the mixed structure.

Thesis supervisor

Nekliudov I.М.

Official opponents

Оболенський М.О.
Бакай О.С.

Files

Avtoreferat.doc

Dissertacija.doc

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