Botsula O. Current instabilities in GaAs with impuct ionization and tunnel effects

The object is is carrier transport in semiconductors combining intervalley electrons transfer effect (IET), impact ionization and tunnel effects; the purpose is an increase in oscillation efficiency, frequency band expansion of electron transfer devices for creation of new active and functional elements; the Tihonov and Samarsky’s solution method, iterative methods, Fourier transformation; the new approach is: The operational characteristics of GaAs diodes with neutral trap centers and current instability arising in those diodes have been determined. For the first time transient processes at hight frequency oscillations have been investigated. The new diode structures with active region connected in series to tunnel or resonance tunnel have been proposed. The static and frequency characteristics of those structures are determined. For the first time, it was found out that in resonance tunnel cathode diodes can occur due to both ITE effect and resonance tunneling. It’s efficiency hasbeen determined