Sydor O. Development of radiation-resistant photodiodes based on layered structures of indium and gallium selenides

In the work the physico-technological bases for the preparation of p-InSe-based photodiodes by laser radiation are developed, their characteristics are investigated, and a model of the formation of p-n-junctions by laser irradiation of layered crystals is offered. For the first time it is found the "small dose" effect at X- and gamma-irradiation of intrinsic oxide-p-InSe and n-InSe-р-InSe photodiodes, a qualitative explanation of the origination of this effect is proposed and a technique for improvement of the parameters of photodiodes on the basis of layered crystals with a low dose irradiation is proposed (300 R) . For the first time the influence of bremsstrahlung gamma-quanta (Eeff = 3 MeV, D = 0.14 - 140 kGy) and high-energy electrons (Е = 12 MeV, D = 3.3 - 330 kGy) on electrical and photoelectric characteristics of InSe(GaSe) photodiodes was investigated. In this case we have observed an improvement of the photodiode parameters and insignificant decrease of some of them at the maximum doses. Theinfluence of radiation comes to the formation of point defects of vacancy type. For the first time the influence of a gamma-neutron (Eeff = 8 MeV, Ф = 1011 - 1013 cm-2) and reactor neutron irradiation (Eeff = 1 MeV, Ф = 1*1014 - 5*1015 cm-2) on the parameters of InSe(GaSe) photodiodes was studied. It is shown that the radiation results in the formation of both point defects and clusters, which are effective recombination centers.