Khozya P. GaAs LEC Furnace Engineering for Low Structural Defects Monocrystal Growth

The object of the research is a single-crystal growing chamber using GaAs LEC method; the subject of the research is a mechanism of thermal term forming in the area of single-crystal crystallization using the method of GaAs LEC ; the purpose of the research is development, on the basis of design results and research of the temperature fields and internal tension in a bar, thermal knot which provides GaAs bar growing with the lower number of structural defects. The methods of the research are based on theoretic fundamental positions of single-crystal growth of semiconductors because of fusion, theory of teplomasoperenosa, mathematical design, method of eventual elements. Analytical dependences of influence estimation of structural elements mutual location co-ordinates are got on the radiation thermal streams of in the working area of setting thermal knot. The numeral-analytical decision of heat exchange task is got on the bar spot . The method of size optimization and setting afterheater location is developed by the special numeral-analytical thermal model and evolutional algorithm. The new model of thermal knot is offered. Results can be used on enterprises and in scientific institutions that are engaged in GaAs single-crystal volume growing