Nikonova A. Ohmic contact type Me-SiC for semiconductor devices

The object is the contact systems of metal type to n- and p- of SiC; the subject is technology of ohmic contacts forming typed Me-n- and p-sic, that provide the optimum indexes of semiconductor devices quality; methods are a four probe method, Auger-electronic spectroscopy and second ionic masspekrometrii (SIMS), x-ray photography phase analysis. Scientific results: it is defined the dependence of specific transitional resistance of ohmic contacts to n-SiC the nickel basis on annealing temperature; temperatures annealing range of (800-1400) 0C , that allows forming of unrectifying contacts on the basis of Ti-Аl system to p-SiC, the size of specific transitional resistance of which does not depend on the annealing temperature; it is proved that ohmic contacts to the semiconductor silicon carbide of with specific transitional resistance no more than 2·10-4 Om·sq.cm on the basis of nickel can be made; it is well-proven that ohmic contacts with specific transitional resistance (1 2) 10-4 Om·sq.cm to the semiconductor silicon carbide in the range of concentrations of uncompensated of p-dopant 1·1016 cub.cm - 1·1019 cub.cm can be made on the basis of Ti-al system; the method of specific transitional resistance of ohmic contacts measuring to SiC is improved . The technologies of ohmic contacts making are developed on production level, used in an educational process and can be used for development of new devices in semiconductor industry.