Murzin D. The expansion of safe operation area of power semiconductor devices with volumetric dividing layers.

The dissertation is devoted to studying of increase methods of the current density homogeneity and electric field in the structure of power semiconductors devises. Scientific work which includes results theoretical and experimental researches on dilation the safe operation area (SOA) of power semiconductor devices for the purpose of realization the optimum set of parameters of a power semiconductor switch. The constructive element - volumetric dividing layer (VDL) allowing to raise homogeneity of distribution of an electric field in depletion area and to lower probability of occurrence of the electric shape of secondary breakdown is presented. One-dimensional approach of solution Poisson equation for modeling structure with infinitely thin high doped p+-elements which have been built in weakly doped n-base is received. Dependence of the maximum voltage on site VDL in p-n junction structure is received. The relation between the maximum dynamic voltage and structure parameters in the switch mode of power bipolar transistor is established. Influence of the local recombination regions created by irradiation by alpha particles, on increase of high-speed performance of high-voltage transistor structures with VDL is investigated. The results of experimental researches of possibility of application the technique VDL for expansion SOA of power semiconductor devices are presented.