Zakharchenko O. Simulation of dosimetric properties of gamma-radiation detectors based on high-resistivity semiconductors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U004555

Thesis Registration Form

0409U004555.pdf

Applicant for

Zakharchenko Olexandr Olexiyovich

Specialization

01.04.21 - Радіаційна фізика і ядерна безпека

Date of defense

22-09-2009

Specialized Academic Board

Д 64.845.01

National Science Center "Kharkiv Institute of Physics and Technology"

Essay

The thesis is devoted to the mathematical simulation study of dosimetry properties of the non-cryogenic gamma-ray semiconductor detectors made from high-resistivity semiconductors (CdTe, CdZnTe, HgI2). Specific physical and mathematical models of processes taking place in semiconductor detectors under interaction with gamma-radiation are developed. A technique is developed allowing reconstructing of the CdTe (CdZnTe) detector response functions at significant levels of thermal noise and charge collection fluctuations. a method of radiation dose measurement is developed, which measurement error is not influenced by spectral composition of gamma-radiation.

Thesis supervisor

Khazhmuradov Manap Akhmadovych

Official opponents

Коваленко Григорій Дмитрович
Лазурик Валентин Тимофійович

Files

aref.doc

dis.doc

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