Lastivka G. Optimization of photo-electric characteristics of heterostructures based on indium and gallium monoselenides by method NQR

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0410U005617

Thesis Registration Form

0410U005617.pdf

Applicant for

Lastivka Galina

Specialization

05.27.01 - Твердотільна електроніка

Date of defense

29-09-2010

Specialized Academic Board

К 76.051.09

Yuriy Fedkovych Chernivtsi National University

Essay

Work is devoted to studies of influence of low temperatures annealing on spectres NQR and characteristics of heterophotodiodes based on p-GaSe-n-InSe. For the first time perfection of single-crystal samples GaSe and InSe before heat treatment was estimated on thin structure of spectres NQR which display streamlining polytypes updatings. For the first time it is fixed that improvement of key parameters of the heterophotodiodes made on a method of "direct optical contact", is observed at temperatures of annealing of initial materials 150-200 оС.

Thesis supervisor

Khandozhko Alexander

Official opponents

Стахіра Павло Йосипович
Рюхтін В'ячеслав Васильович

Files

Lastivka.doc

aref.doc

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