Seletska O. Radiomeasuring Optical Transducers to Determine the Time of Plasma Chemical Etching

The research object is the process of converting light into a frequency signal in the sensitive semiconductor structures, posed the problem of the development of radio measuring optical transducers with improved metrological characteristics; research methods based on the use the main provisions of the theory of functions of complex variable to determine transfer function and sensitivity equation; theory calculation of nonlinear circuits using Kirchhoff's laws to determine the impedance radiomeasuring optical transducers based on MOS and bipolar transistor structures. Scientific novelty: the first time a method using reactive properties of transistor structures with negative resistance to an optical transducers of plasma radiation, based on a conversation "light - frequency - time of plasma etching"; the first time the method of plasma etching process that differs from existing to those used in the time dependence of light spectral lines and bands and frequency converting of the the analog signal; improved mathematical models of radio measuring optical transducers, which unlike existing light influencing on the elements for nonlinear equivalent circuits of transducers based on MOS and bipolar transistor structure with negative resistance.Degree of introduction - the results of research are applied in SRI indicator devices "Helium"(Vinnitsa), and the learning process of the study course "Semiconductor converters information" in VNTU. Field (industry) of the use - on the microelectronic industry of Ukraine in the process control systems.