Kukhtaruk N. Sensitivity mechanisms of narrow-gap Hg1-xCdxTe in terahertz and subterahertz spectral region.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U003286

Applicant for

Specialization

  • 01.04.01 - Фізика приладів, елементів і систем

27-04-2011

Specialized Academic Board

Д26.199.01

Essay

The dissertation is devoted to investigation of terahertz and subterahertz sensitivity of Hg1-xCdxTe-detector at 60 - 300 К. It has been found experimentally that mercury cadmium telluride thin layers can be used as terahertz and subterahertz ambient temperature detectors or moderately cooled detectors. The influence of composition, conduction type, impurity density, temperature, and bias current on detector sensitivity was investigated. The results obtained were compared with those predicted from the semiconductor hot electron bolometer theory. On the basis of theoretical and experimental results agreement a conclusion was made, that detector sensitivity is associated with the change carrier's temperature by electromagnetic wave, which propagates in the bipolar semiconductor waveguide. Taking into account Jonson's noise, generation-recombination noise and photon noise the noise equivalent power of the detector was estimated. Operating conditions and semiconductor parameters to optimization of detector construction for uncooled operating regime was determined.

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