Batareyev V. Increasing the structure perfection of monocrystals of semi-isolating gallium arsenide, grown by the Chohralsky method with liquid hermetic sealing

The thesis focuses on creating express methods and control equipment for structural perfection of single crystals of PIN GaAs as well as developing on their basis some tech-nological measures for minimization of thermal stress and improvement of PIN GaAs in-got structure perfection. A "Polyaron" apparatus was designed for express integral control of internal stress in PIN GaAs plates using an infrared video system that allows monitoring of the technical process. A local method and automated "Polyaron-2" apparatus with using the optical quan-tum generator with =1,15 micron for local control of internal stress in PIN GaAs within 8-107 Pa were prepared. For the first time there was developed a complete model and algorithm of the local measurement of internal stress distribution on a plate plane of GaAs. The operator interface of automated measuring equipment "Polyaron-2" with the possibility of presenting the results of measurement of internal stress on a plate plane of GaAs, and the forms of lines of equal stress (isobars) distribution in a plate plane. The optimal thermal conditions for backing heater submerged in liquid Hermetic by growing ingots PIN GaAs, namely 980 C for growing stage of ingot and 1100 C for growing stage of cylindrical part were proposed.