Konoplyanko D. Intercalated nanocomposite capacitors based on layered crystals А3В6

This thesis deals with completed development of nanocomposite capacitors on the basis of structure GaSe<KNO3> where charge accumulation and transfer are caused by quantum-dimensional effects. Intercalation reservoir capacitor on the basis of structure GaSe<KNO3> consisting of gallium selenide single crystal layers and inclusions of intercalant KNO3, which lie in Van-der-Waals slits of this crystal was developed for the first time; molten ferroelectric material KNO3 introduced into interlayer slits of gallium selenide having the highest index of specific electric capacitance of 2148 F/g is used as intercalant in this capacitor. Intercalation filter capacitor which can be applied in range of 3 kHz and where charge accumulation takes place between layers of GaSe and quantum 3D nanoinclusions of ferroelectric material KNO3 having high specific electric capacitance with the maximal value of ~0,5 F/g was developed for the first time. New nanocomposite photocapacitor containing frontal layer of metal Pb-Sb which is transparent for optical radiation, photosensitive semiconductor material GaSe<KNO3> and nickel contact electrodes positioned on the metal layer and the semiconductor material was developed for the first time. This nanocomposite photocapacitor has high specific electric capacitance ~ (10^-2 - 2) F/cm2 in the frequency range less than 100 Hz at room temperature. It is determined that capacity increase of a photocapacitor on the basis of nanocomposite material GaSe<KNO3> is caused by Maxwell-Wagner effect and vertical carrier transfer between numerous quantum wells situated along crystal axis C. Key words: nanocomposite capacitors, layered crystals, ferroelectrics, intercalation, composite structure, capacity.