Bykov M. Simulation of photo converting heterostructures based on amorphous and monocrystal silicon

The aim - investigation into photoelectric characteristics of photo converting structures based on amorphous silicon monocrystal heterostructures (ASMH), increase in the structure efficiency complete with reasonable technological expenditures for production. Object - physical processes of photogeneration and charge transfer in photo converting ASMH structures. Methods - magnetron film deposition, investigation of high-temperature conductivity of silicon working layers, IR spectroscopy method, optical and electron-microscopical methods to analyze defects on the structure surface using computer systems. Results - a new numerical-analytical model of the process of carrier transfer in ASMH-based semiconductor structures has been developed taking into account density of states in the mobility slit of the hydrogenised amorphous silicon. The program package for simulation of amorphous semiconductor structures has been developed, making it possible to carry out with kinetic approximation computation of characteristics of amorphous photo converting structures and ASMH-based structures. As a result of these investigations, the relationships between photovoltaic conversion coefficient and design parameters of amorphous thin-film structures were obtained, and the optimal film thickness was determined to achieve the maximum photovoltaic conversion. Implementation - in training course "Materials for Microelectronics and Methods of Their Investigation" at KHNURE. Application - photo converters production process