Lebed O. Technological management methods structure epitaxial layers and monocrystals GaAs

Object - heat treatment (HT) and crystallization processes of monocrystals produced by liquid phase epitaxy (LPE). The purpose - to establish technological management methods for structural and electrophysical parameters of GaAs monocrystals during HT and LPE. Methods - mathematical physics apparatus. Results - further development of a concept of stoichiometry and dislocations distribution influence on formation of structural condition of semi-insulating undoped GaAs monocrystals as a result of HT, which allows to control monocrystals structure and achieve more represented results during thermal annealing. Development of a concept of liquid phase composition impact on structural condition of GaAs epitaxial layers (ELs) produced by LPE method on the basis of isovalent solvent metal, which allows to produce ELs with new electrophysical parameters. Solution of mathematical model of dislocation glide was improved using Lambert function, which allowed to analyse conditions of isovalent solvent metal use during EL growing by LPE method. Conditions of the use of bismuth solution-melt have been for the first time theoretically studied and experimentally demonstrated during growing of GaAs ELs with a reduced density of dislocations threading from substrate. It is introduced - at ChP Galar pilot factory, Svetlovodsk. Sphere of application - manufacture of semiconductor units and devices