Kutrakov A. Piezoresistive pressure sensors based on silicon whiskers for the wide temperature and frequency range

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0412U004366

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

27-09-2012

Specialized Academic Board

Д35.052.13

Essay

The possibility of strain gauges based on p-type Si whiskers to operate at the temperature up to +500oC with high gauge factor was shown. The radiation stability of these strain gauges to the electron irradiation with energy E <= 10 MeV and fluence Ф <= 1 x 1017 el/cm2 was established. The technological bases of pressure sensors creation based on p-Si whiskers operating in different temperature ranges were developed. Piezoresistive sensors based on silicon whiskers to measure static and dynamic pressure, operating in temperature ranges from -269...+20oC to +20...+320oC were created.

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