Siedin E. Single layer silicon epitaxial structures with improved structural characteristics technology development

The thesis is devoted to the technology of the single-layered silicon epitaxial structures (SLSES) development with sharp concentration-transition region and improved structural characteristics. Provided calculations of thermoelastic bending and thermal stresses, which can be used for predicting the occurrence of dislocation slip lines and other structural defects that appear in SLSES by heat treatment. Developed aggregate "Vertical-2MA" for SLSES producing at reduced pressure and temperature in the reactor. Developed scientifically grounded methods and machines for controlling complex shapes and bending stresses in SLSES. Calculated expressions to determine the critical stress Gcr and critical radial gradient of temperature Tcr and determined the relationship of these expressions with the diameter, thickness and elastic constants of SLSES: Young's modulus E and Poisson's ratio v.