Brus V. TiO2 thin films and heterojunctions based on them

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0412U004758

Thesis Registration Form

0412U004758.pdf

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

29-10-2012

Specialized Academic Board

К 76.051.09

Yuriy Fedkovych Chernivtsi National University

Essay

The dissertation is devoted to the development of technological regimes of pure and doped TiO2 thin films deposition with given and reproducible electrical and optical properties as well as the determination of dominating current transport mechanisms, barrier parameters and photoelectric properties of surface-barrier heterojunctions prepared on the basis of the TiO2 thin films under investigation. The complex analysis of electrical and photoelectrical properties of the heterojunctions mentioned above provides evidence of their possible application in semiconductor devices for electronics and photovoltaics.

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Files

aref.doc

dis.doc

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