Lozinskii V. Development of technologies for improvement of properties of optical elements based on GaAs, dielectric films, and solar cells with their usage.

In the dissertation new technology for improvement of optical properties and degradation stability of IR - optical elements based on semi - insulating GaAs has been developed. The technology includes plasma treatments followed by deposition of diamond - like carbon films. It was established that due to application of the plasma treatments prior to DLC film deposition the optical transmittance of optical elements based on GaAs may be substantially improved. For the first time, it has been shown that degradation stability of optical elements based on semi-insulating GaAs cryatals against action of gama-irradiation may be improved due to deposition of antireflection and protective DLC films. It was also shown that due to structural modidication of the DLC films by gama-quanta and appearance of sp3-coordinated C-C bonds in the films after this treatment the transperacny of the irradiated DLC film-GaAs structure may even exceed the transperancy of the initial (unirradiated) one. Technological regimes for deposition of the DLC films with required properties were optimized. It was shown that improving of multi - Si based SC efficiency up to 1,5 times may be achieved due to deposition of the DLC films and application of the developed photovoltaic concentrator system. The mechanism of SiO2 films structures modification as well as their restoration under ion - plasma and UV treatments were established. The system for automation of technological process of gas detonation deposition of insulating and thermal conducting layers has been developed.