The existing analogues of RGB white light sources, as well as functional and technological basics of light emitting diode structures using SiC, sapphire and Si substrates were studied. The analytical necessity of physico-technological parameters "harmonization" of LED structures with parameters of transistor integrated circuits on silicon were proved. The integrated solid-state white light sources on a flexible aluminum-polyimide carrier and silicon was implemented. According to the research of GaN LED electroluminescence spectra on monochromator-23 when the temperature changes from -40 to + 60°C using climatic experimental heat-cold chamber Mini Subzero MC71, the long-wavelength wing expansion range of 5 nm / 100K and peak wavelength shift of 3-10 nm/100K that is caused by recombination through impurity levels in the mid- band gap was found. The temperature increasing of the active region has led to a spectra intensity of impurity levels increasing. The intensity of the spectrum, which is responsible for interband transitions decreases on 0.05 rel. un./100K that caused the displacement of atoms of the crystal lattice. According to this a direct relationship between the atomic composition of the active region of light-emitting structures of GaN, InxGa1-xN and standard dynamic displacements of atoms in the crystal lattice was determined. A comparative analysis of the results with similar studies for indium phosphide was spent. It was experimentally determined that the radiation intensity with temperature in the range of -40°С - +60°С decrease in GaN 2 times less than in InP. On the base of the relationship between relative quantum efficiency of a radiative recombination and standard dynamic displacement, the relative quantum efficiency of the GaN compounds radiation less dependent on the standard dynamic displacements than AlInGaP solid solutions. As a result of experimental electroluminescence spectrum studies of RGB, RGBW, RGBO white light sources on goniophotometer, the source of white light, which combines source of blue (450-465 nm), green (520-535 nm), orange (605-620nm) and red (620-630 nm) light without the use of additional sources of white light with luminophore coating with color rendering index of 80-85 was obtained. It is the basis for the development of integrated white light sources of InxGa1-xN solid solutions on Si in the same technological process. The practicability of replacing the commonly used solid solutions AlInGaP red LED structures on solid solutions InxGa1-xN with indium content 30-40% was proved. This provides a monolithic integrated RGB emitters in a single process. The relevance of InGaN active layers refill-deposition in a SiO2 nanopore, which is passivity to the walls of nanoporous structure of silicon oxide was demonstrated. Based on experimental studies of hybrid integration of optoelectronic components with transistor control circuits it was shown that through the use of integrated RGB-diode structures multispectral subsources a light microprocessor can set the color temperature of the radiation in the range of 2400-10000K that corresponded to day shift of natural light with color rendering index of 90-95Ra. On the basis of the photosensitivity experimental studies of red (0.1 A/W), green (0.08 A/W), and blue (0.1 A/W) LED heterostructures the degree of spectral selectivity of their sensitivity was determined. The study showed a photoresponse decreasing of red (> 5 103 times), green (> 104 times) and blue (> 105 times) LEDs at the time of wavelength shifting toward IR and smooth ( 15% at 100 nm) photoresponse decreasing toward the UV range shift. As a result the AlGaInP LED as a selective photodetector was chosen. The reverse mode of LED including AlGaInP heterostructures, for feedback on the intensity of radiation using a silicon chip was implemented. It gives possibility to improve packaging density of a manufacturable devices and can be used in compact light sources. A new solid state white light emitting heteroepitaxial Si/por.Al2O3 (SiO2) / III-N nanostructure RGB matrix, which provides the possibility to change the lighting parameters of the integrated light source and get a super-bright RGB LED structure with a color rendering index of 90-95 Ra was invented and patented. The software application with a graphical interface that allows you to simulate the distribution of RGB microclusters structures on the surface of structured on-chip buffer nanolayers, count the number of LED chips on substrates given diameter, the approximate area of nanoporous structures (10%), taking into account technological route and rely the masks structure for RGB white light source on Si was created. Theoretically substantiated and experimentally confirmed that AIIIBV hybrid-integrated RGB white light sources on silicon substrates, which was the developed and patented can be used in the manufacture of inexpensive, portable, energy efficient multifunction devices and smart lighting. The researches described in this thesis can be used in the manufacture of solid-state light processors, enabling significantly improve the economic performance of RGB-white light sources by their monolithic integration of high-tech manufacturing transistor integrated circuits on silicon.
