Afanasieva T. Adsorption and diffusion of the IV, V group elements and oxygen on the Si(001) and Ge(001) surfaces at low coverages.

The thesis is devoted to the investigation of interaction of the adsorbed atoms with the silicon and germanium surfaces, which are the most used in modern micro- and nanoelectronics. Adsorption and coadsorption of group V elements (As, Sb and Bi) and oxygen on the Si(001) surface, the diffusion of Bi addimers on the the Si(001) surface and Si, Ge addimers on the Ge(001) surface, which occur in heteroepitaxy and influence the surface chemistry, have been investigated. A new model has been proposed to describe the interaction of oxygen with the Si(001) surface covered by atoms of group V elements (As, Sb and Bi). This model explained the changes of oxygen adsorption character of the M/Si(001) surfaces. The plausible rotation and diffusion pathways of on-top Si, Ge addimers on the Ge(001) and Bi addimers on Si(001) dimer rows have been studied. The calculated diffusion activation barriers for Si, Ge addimers on Ge(001) surface and Bi addimers on Si(001) surface are in good agreement with the experimental data.