Mostovyi A. The development of the heterojunctions based on TiO2 thin films doped by 3d-elements for electronic devices

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0414U004410

Thesis Registration Form

0414U004410.pdf

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

30-09-2014

Specialized Academic Board

К 76.051.09

Yuriy Fedkovych Chernivtsi National University

Essay

The thesis is devoted for the development of new heterojunctions based on TiO2 thin films doped by 3d-elements for electronic devices with the predictable and reproducible electrical and optical properties as well as to the determination of the dominating current transport mechanisms, barrier parameters and photoelectrical properties of surface-barrier heterojunctions. New heterojunctions n-TiO2:Mn/p-Si, n-TiO2:Cr2O3/p-Si, n-TiO2:Mn/p-CdTe were fabricated by the deposition of doped TiO2 thin films by means of the electron-beam evaporation technique.

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Files

aref.doc

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