Klyui A. Development of technologies for improvement of optical properties and structure of semiconductor and dielectric films for solar cells.

In the dissertation mechanisms of influence of RF power discharge on the DLC films properties were determined. Influence of UV and gamma-irradiation on optical properties of the DLC films was investigated. A mechanism was proposed that UV quanta break hydrogen bonds and diminish H amount, activate air oxygen that diffuse into the film, increase the amount of sp^3C atoms, C-O, and C-N bonds. As a result, value of optical bandgap for the films increases. sp^2 hybridization of C atoms, releasing and diffusing of hydrogen into the Si substrate, creation nitrogen bonds take place under the gamma-irradiation. The increasing of nitrogen amount in the films enables to improve resistance stability of the films against action of the gamma-irradiation. In epitaxial GaN films subjected to gamma-irradiation "low dose" effect was observed. The effect is accompanied by decreasing of broadening parameters for spectral bands in electroreflectance spectra those correspond to direct transitions. It is evidence of the film structural ordering. In this case, decreasing of internal tensile stresses value also takes place. It was also shown that microwave treatment of low power is prospective for improvement of epitaxial GaN film properties. In particular, the treatment allows us to decrease internal starins in the film and improve structural perfection of thin subsurface layer. Physical mechanisms of thermal annealing on air, "chloride" treatment, hydrogen plasma treatment, and thin diamond-like carbon film deposition effect on CdTe film photoelectric properties have been established. It was shown that combination of the treatments enables to increase carrier lifetime in the CdTe film. Experimental samples of autonomous helio-energetic systems were developed and produced. The systems are aimed to supply different electrical equipment.