Nikonov A. The technology of high-quality silicon device structures getting using high-energy radiation sources and heat treatment.

The analysis of opportunities for high layers using high energy radiation sources and for treating the far infrared range with a low concentration of impurities is done. A computer model of the processes of capture phosphorus impurities in the high energy implantation of silicon at the interface model the spatial distribution of free carriers generated in the semiconductor radiation, which allowed offering recommendations for the processes of doping impurities and optimization of process parameters is made. Technology of producing instrument silicon structures by ion implantation of electronic two-stage annealing, which provides a maximum impurity concentration that significantly (2.5 times) than the equilibrium solubility limit is made. An experimental verification, confirming the previous fact is done