Vynohradov A. Сharge transport mechanisms in ohmic contacts to silicon microwave diodes

The thesis deals with investigation of mechanisms of current flow in ohmic contacts to Au-Ti-Pd2Si-n-Si with high density of structural defects at the interface of metal - Si and study of growing temperature dependence of contact resistivity as temperature increases as well as ohmic contacts to Au-Ti-Pd2Si-n+-n-Si. The above dependence is due to the mechanism of current flow through the metal shunts associated with dislocations or the mechanism of formation of ohmic contact to silicon owing to presence of an accumulation band bending at the n+-n-Si boundary, with allowance made for predominance of contact resistance of the high-resistant n-Si layer over that related to thermal-field current flow through the metal-Si barrier. Various methods of preparation and treatment of ohmic contacts to n-Si were applied in the course of investigations. The technological factors were determined that led to high dislocation density in the n-Si near - contact region, thus resulting in appearance of metal-type conduction in ohmic contacts.