Petrenko I. Influence of radiation defects on electrophysical and optical properties of GaP and AlGaAs light emitting diodes

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0416U003520

Thesis Registration Form

0416U003520.pdf

Applicant for

Petrenko Igor Vitaliyovych

Specialization

05.27.01 - Твердотільна електроніка

Date of defense

30-05-2016

Specialized Academic Board

К76.051.09

Essay

The theses are devoted to the study of radiation effects' influence on electrophysical processes in GaP crystals and light emitting diodes (LEDs) and also in three-component compound AlGaAs LEDs . While irradiating GaP LEDs with alpha-particles, the low dose effect occurs: capacitance of the p-n-transition increases, potential barrier among both regions drops and the differential resistance of current-voltage characteristic drops too. Irradiation of diodes with electron fluence Ф=5?1016сm-2 leads to the complete quenching of luminescence microplasma.

Thesis supervisor

Tartachnyk Volodymyr Petrovych

Official opponents

Когут Ігор Тимофійович
Григорчак Іван Іванович

Files

aref.doc

dis.doc

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