Babychenko O. Photoelectric properties of crystalline silicon structures with hydrogenated nanosized inclusions

The object – phenomena of mobile charge carrier generation by quantums of light in single-crystalline silicon with amorphous nano-inclusions. The goal – obtaining properties of heteromorphic semiconductor materials based on crystalline and amorphous silicon of various kind and degree of amorphization essential from the point of view of their use in photoelectric converters for solar energetics. Methods – kinetic equation method with modification of electron density states distribution and optical absorption spectrum function considering the degree of amorphous silicon structure disorder; method of substitution patterns to determine photoconductivity of single-crystalline silicon at various degrees of structure disorder of amorphous inclusions of different geometrical shapes. Results – electron density states distribution and the spectrum of the normalized generalized function of the density states distribution in the heteromorphic silicon are obtained in a theoretical way, considering the degree of structure disorder, the size and morphology of the inclusions; photoconductivity characteristics of the heterostructure of amorphous hydrogenated and single-crystalline silicon are obtained, as functions of the size and morphology of amorphous inclusions in the crystalline substrate; methods of calculating the influence of amorphous inhomogeneities on the photoconductivity of crystalline silicon are more developed, depending on the physical properties and geometry of these inhomogeneities. Scope – solar energetics, optoelectronics