Mikhailenko I. Semiconductor transducers of mechanical values based on transversal tensoeffects

The dissertation is devoted to the development of physical and technological principles of creation and research of transducers of mechanical quantities on the basis of transverse effects in anisotropic semiconductors. Physical bases of construction of transducers of mechanical quantities with use of transverse effects are developed and their research is carried out on experimental samples. The prospect of using converters based on the effect of tenso-ers is demonstrated both in discrete and integrated design to create force and pressure sensors operating in the temperature range 233-373 K. A number of concentration effects in Ge have been identified and transducers of the original structures, such as differential tensotransistor, non-contact linear magnetic displacement sensor based on magnetic center effect, threshold angle sensors and force based oscillistor effect with the ability to control the switch threshold. The researches conducted confirm the prospect of practical use of transverse effects in multi-valley semiconductors for creation of converters of mechanical quantities. The developed transducers are implemented in industrial devices for measuring fluid pressure in wells PDM-2 and PDMT-1.