Kavertsev S. Theoretical aspects of growth and post-grown treatment of II-VI semiconductor solid soliutions

Object of investigation - narrow-gap II-VI semiconductors. Goal of thesis - analysis and soliution of theoretical problems of growth and post-grown treatment of narrow-gap II-VI semiconductors. Investigation methods - theoretical analisis of phase equilibrium conditions,galvanomagnetic measurements of epitaxial films, mathematical simulation of diffusion process . It is shown that the elastic strain in (Hg,Mn)Te LPE films affect no the Mn fraction in solid. The solidus of Hg-Mn-Te ternary system is calculated. It is found that the concentration of carriers in n-type (Hg,Mn,Cd)Te/(Cd,Zn)Te epilayer is increased and the mobility of ones is decreased if the interface layer between substrate and film exists. Obtained results may be used for devising a new methods of growth and post-grown treatment of narrow-gap II-VI semiconductors.