Virt I. Photoelectronical phenomena in structures based on narrow-gap semiconductors under the macrodefects and ingomogeneities

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0501U000329

Thesis Registration Form

0501U000329.pdf

Applicant for

Virt Igor Stepanovych

Specialization

01.04.01 - Фізика приладів, елементів і систем

Date of defense

21-09-2001

Specialized Academic Board

Д.35.052.12

Essay

The thesis presents results of investigations of infrared optoelectronic materials based on narrow-gap semiconductors Hg1-xCdxTe, Hg1-x MnxTe, Hg1-x-yZnxCdyTe. Some new methods of the growth of monocrystals as well as films are improved. The models of recombination processes of nonequilibrated charge carriers in inhomogeneous photoresistive materials based on diffussion phenomena are proposed. Main well as parameters of functional structures based on Hg1-xCdxTe are obtained.

Thesis supervisor

Савицький В. Г.

Official opponents

Сизов Ф.Ф.
Раренко І.М.
Пашковський М.В.
Тетьоркін В.В.

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