Timofeyev V. The modelling of submicron components of integrated circuits on junctions AIIIBV

Complex research on physical effects and processes in submicron integrated structures is carried out on the basis of junctions AIIIBV for integrated circuits with the submicron sizes of areas of active components and wide spectrum of models of devices is developed on the basis of semiconductor AIIIBV and their junctions, including heterostructures, in view of submicron effects. From uniform positions physical features and the effects inherent in submicron structures with the sizes, comparable with a free run electron length are analysed, generalized and formulated, a hierarchical line of mathematical models of various levels is proved and created, functional features of submicron devices and conditions of applicability of their models to adaptive tasks of designing are determined.