Krukovsky S. Complex doped structures based on A3B5

Conception of influence on admixture-imperfect system of epitaxial layers and structures A3B5 on the basis of LPE method is developed and realized in this work due to complex dopping by the chemical elements of different functional destination, some of them execute role of geters of uncontrolled admixtures, other - execute role of boosters of getero-effect. Basic regularity of influence of complex dopping by rare-earth and izovalent elements on their photoluminescent, kinetic and structural properties are explored on the example of connections of GaAs, AlGaAs, InP, InGaAs, InGaAsP. Optimum quantitative correlations between rare-earth and izovalent elements in melts are determinated. At these correlations parameters of epitaxial layers obtained by LPE method are the best. Obtained results were the basis for new technological approaches to forming device epitaxial structures A3B5 with improved parametres.