Bolshakova I. Radiation hard magnetic field sensors based on A3B5 semiconductors for hard radiation environment

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0507U000393

Thesis Registration Form

0507U000393.pdf

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

15-06-2007

Specialized Academic Board

Д 35.052.12

Lviv Polytechnic National University

Essay

Dissertation is devoted to the problem of development of a new generation of the magnetic field semiconductor sensors for hard radiation operation environment. Basic concept is based on a complex which includes the creation of radiation hard A3B5 semiconductor materials for magnetic field sensors, constructive solutions of thin-film structures for improvement of technical characteristics of sensors, and algorithms of sensors' self-diagnostics and their in-situ calibration in radiation environment.

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Files

autoreferat--autoreferat_text_final.doc

autoreferat--autoreferat_titulka.doc

dissertation--Disertation_Bolshakova.pdf

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