Khodakovskyi M. Methods and models of constructing memory devices using nano- and molecular technologies

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0519U000685

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

24-09-2019

Specialized Academic Board

Д 26.002.08

Publishing and Printing Institute of Igor Sikorsky Kyiv Polytechnic Institute

Essay

The dissertation is devoted to solving the scientific and applied problem of constructing storage devices using nanoscale and molecular technologies by developing a new class of storage devices with super-high density of recording of information based on methods and models of new and improved existing methods of solid state electronics. Methods of constructing storage devices using scanning tunneling lithography, local probe oxidation using atomic force lithography, technologies for the creation of memristor nanoelectronic structures and the recording of information on molecular carriers, in particular peptide structures and structures of molecular electronics using nucleic acids, have been developed. The developed methods, models and methods for developing memory and ultra-high density recording devices can be used to process technological processes for their production. New scientific and technological solutions provide an increase in the recording density of 1–2 orders of magnitude when creating memory structures and devices based on them.

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